Semiconductor device
A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bo...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer. |
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