Semiconductor device

A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Choi, Byoungdeog, Choo, Seongmin, Yi, Ha-Young, Kwon, Hyukwoo
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.