Semiconductor integrated circuit device having an electrostatic discharge protection circuit and method of manufacturing the semiconductor integrated circuit device

A semiconductor integrated circuit device may include a semiconductor substrate, an active well, an emitter, a base, a collector, a body contact region, and a blocking well. The semiconductor substrate may have a first conductive type. The active well may be formed in the semiconductor substrate. The active well may have a second conductive type. The emitter and the base may be formed in the active well. The collector may be formed in the semiconductor substrate outside the active well. The body contact region may be formed in the semiconductor substrate to electrically connect the collector with the semiconductor substrate. The body contact region may have a conductive type substantially the same as that of the collector. The blocking well may be configured to surround an outer wall of the body contact region. The blocking well may have the second conductive type.