Method of manufacture of a semiconductor device

Method of manufacture of a semiconductor device

In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physica...

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Hauptverfasser: Li, Pai Yuan, Wu, Chih-Wei, Huang, Kuan-Yu, Huang, Sung-Hui, Kuo, Li-Chung, Lee, Long Hua, Shih, Ying-Ching
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Li, Pai Yuan
Wu, Chih-Wei
Huang, Kuan-Yu
Huang, Sung-Hui
Kuo, Li-Chung
Lee, Long Hua
Shih, Ying-Ching
description In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11201097B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11201097B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11201097B23</originalsourceid><addsrcrecordid>eNrjZND3TS3JyE9RyE9TyE3MK01LTC4pLUoFcRMVilNzM5Pz81JKk0vyixRSUssyk1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGBoYGluZORMTFqAB97Kuo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of manufacture of a semiconductor device</title><source>esp@cenet</source><creator>Li, Pai Yuan ; Wu, Chih-Wei ; Huang, Kuan-Yu ; Huang, Sung-Hui ; Kuo, Li-Chung ; Lee, Long Hua ; Shih, Ying-Ching</creator><creatorcontrib>Li, Pai Yuan ; Wu, Chih-Wei ; Huang, Kuan-Yu ; Huang, Sung-Hui ; Kuo, Li-Chung ; Lee, Long Hua ; Shih, Ying-Ching</creatorcontrib><description>In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211214&amp;DB=EPODOC&amp;CC=US&amp;NR=11201097B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20211214&amp;DB=EPODOC&amp;CC=US&amp;NR=11201097B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Li, Pai Yuan</creatorcontrib><creatorcontrib>Wu, Chih-Wei</creatorcontrib><creatorcontrib>Huang, Kuan-Yu</creatorcontrib><creatorcontrib>Huang, Sung-Hui</creatorcontrib><creatorcontrib>Kuo, Li-Chung</creatorcontrib><creatorcontrib>Lee, Long Hua</creatorcontrib><creatorcontrib>Shih, Ying-Ching</creatorcontrib><title>Method of manufacture of a semiconductor device</title><description>In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3TS3JyE9RyE9TyE3MK01LTC4pLUoFcRMVilNzM5Pz81JKk0vyixRSUssyk1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChoZGBoYGluZORMTFqAB97Kuo</recordid><startdate>20211214</startdate><enddate>20211214</enddate><creator>Li, Pai Yuan</creator><creator>Wu, Chih-Wei</creator><creator>Huang, Kuan-Yu</creator><creator>Huang, Sung-Hui</creator><creator>Kuo, Li-Chung</creator><creator>Lee, Long Hua</creator><creator>Shih, Ying-Ching</creator><scope>EVB</scope></search><sort><creationdate>20211214</creationdate><title>Method of manufacture of a semiconductor device</title><author>Li, Pai Yuan ; Wu, Chih-Wei ; Huang, Kuan-Yu ; Huang, Sung-Hui ; Kuo, Li-Chung ; Lee, Long Hua ; Shih, Ying-Ching</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11201097B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Li, Pai Yuan</creatorcontrib><creatorcontrib>Wu, Chih-Wei</creatorcontrib><creatorcontrib>Huang, Kuan-Yu</creatorcontrib><creatorcontrib>Huang, Sung-Hui</creatorcontrib><creatorcontrib>Kuo, Li-Chung</creatorcontrib><creatorcontrib>Lee, Long Hua</creatorcontrib><creatorcontrib>Shih, Ying-Ching</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Pai Yuan</au><au>Wu, Chih-Wei</au><au>Huang, Kuan-Yu</au><au>Huang, Sung-Hui</au><au>Kuo, Li-Chung</au><au>Lee, Long Hua</au><au>Shih, Ying-Ching</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of manufacture of a semiconductor device</title><date>2021-12-14</date><risdate>2021</risdate><abstract>In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of manufacture of a semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T21%3A36%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Li,%20Pai%20Yuan&rft.date=2021-12-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11201097B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true