Method of manufacture of a semiconductor device

Method of manufacture of a semiconductor device

In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physica...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Li, Pai Yuan, Wu, Chih-Wei, Huang, Kuan-Yu, Huang, Sung-Hui, Kuo, Li-Chung, Lee, Long Hua, Shih, Ying-Ching
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.