Method for forming magnetic film and method for manufacturing magnetic storage element

A method includes forming an amorphous magnetic film on a film formation subject by sputtering a target that includes any one selected from a group consisting of Mn3Sn, Mn3Ge, and (Mn1-xFex)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. Th...

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Bibliographische Detailangaben
Hauptverfasser:	Nozue, Tatsuhiro, Morita, Tadashi, Oh, Seungjun
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method includes forming an amorphous magnetic film on a film formation subject by sputtering a target that includes any one selected from a group consisting of Mn3Sn, Mn3Ge, and (Mn1-xFex)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. The crystalizing includes heating the amorphous magnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.