Manufacturing methods of semiconductor image sensor devices

Manufacturing methods of semiconductor image sensor devices

A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a pl...

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Bibliographische Detailangaben
Hauptverfasser: Wu, Cheng-Yi, Li, Sheng-Chan, Chang, Chao-Ching, Lin, Min-Hui, Tsai, Jian-Shin, Chou, Chia-Hsing, Huang, Chih-Hui, Lee, Chin-Szu, Lin, Yi-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A plurality of radiation-sensing doped regions are formed in a substrate. A trench is formed in the substrate between the radiation-sensing doped regions. A SiOCN layer is filled in the trench by reacting Bis(tertiary-butylamino)silane (BTBAS) and a gas mixture comprising N2O, N2 and O2 through a plasma enhanced atomic layer deposition (PEALD) method, to form an isolation structure between the radiation-sensing doped regions.