3D-NAND mold

Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the...

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Bibliographische Detailangaben
Hauptverfasser: Kitajima, Tomohiko, Kang, Chang Seok, Srinivasan, Mukund, Natarajan, Sanjay
Format: Patent
Sprache:eng
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Zusammenfassung:Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (Nf:Of); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (Wm:Om), wherein 0.1(Wm:Om)