Method for determining properties of an EUV source

The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a c...

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Bibliographische Detailangaben
Hauptverfasser:	Mueller, Ulrich, Hauf, Markus, Laufer, Timo
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The disclosure provides a method for determining at least one property of an EUV source in a projection exposure apparatus for semiconductor lithography, wherein the property is determined on the basis of the electromagnetic radiation emanating from the EUV source, and wherein a thermal load for a component of the projection exposure apparatus is determined and the property is deduced on the basis of the thermal load determined.