Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:wherein:L1 to L3 are independently substituted or unsubstituted hydrocarbylene,R1 to R4 are independently hydrogen, a substituted or unsub...

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Bibliographische Detailangaben
Hauptverfasser:	Shin, Jung Ha, Kwak, Jae Hoon, Lee, Jong Ho, Kim, Young Bom, Kim, Cheol Woo, Lee, Kwang Kuk, Jo, Jin Kyung
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:wherein:L1 to L3 are independently substituted or unsubstituted hydrocarbylene,R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, andXn− is an n-valent anion, where n is an integer of 1 to 3.