Semiconductor memory device including page buffers

A semiconductor memory device includes at least two transistors, each including a gate that traverses, in a first direction, an active region of a first substrate defined by an isolation layer, and junction regions disposed in the active region on opposite sides of the gate, and coupled to a memory cell array through a bit line; and a plurality of contacts, coupled respectively to the junction regions, that pass through a dielectric layer that covers the transistor. Among the plurality of contacts, a contact coupled to a junction region to which an erase voltage is loaded is disposed at a center portion of the active region in the first direction, and a contact coupled to a junction region to which the erase voltage is not loaded is disposed at an edge portion of the active region in the first direction.