Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition
The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate ma...
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| creator | Moon, Jung Yoon Seong, Hyeon-Jun Moon, Byung Woong Kim, Su Han Chung, Kwang-Choon |
| description | The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit. |
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The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.</description><language>eng</language><subject>ADHESIVES ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DYES ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NATURAL RESINS ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PAINTS ; POLISHES ; PRINTED CIRCUITS</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211026&DB=EPODOC&CC=US&NR=11160171B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211026&DB=EPODOC&CC=US&NR=11160171B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Moon, Jung Yoon</creatorcontrib><creatorcontrib>Seong, Hyeon-Jun</creatorcontrib><creatorcontrib>Moon, Byung Woong</creatorcontrib><creatorcontrib>Kim, Su Han</creatorcontrib><creatorcontrib>Chung, Kwang-Choon</creatorcontrib><title>Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition</title><description>The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.</description><subject>ADHESIVES</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>DYES</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NATURAL RESINS</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>PRINTED CIRCUITS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjE0KwjAQhbtxIeodxgMIRkH3FsW9ui4hmdiBSabkR-gBvLetimtX74f3vWn1rCmaQhmcRE_hDh5zKxZKGkNCRpPpgYDZtGMjDt5dJKOZezASbPlMBlIz5JYSOGI_wGiBdY8RdLC_hyRcMkkYUN9JotHPq4nTnHDx1Vm1PB2v9XmFnTSYOm0wYG5uF6XUbq326rDZ_rN5AWV-TDM</recordid><startdate>20211026</startdate><enddate>20211026</enddate><creator>Moon, Jung Yoon</creator><creator>Seong, Hyeon-Jun</creator><creator>Moon, Byung Woong</creator><creator>Kim, Su Han</creator><creator>Chung, Kwang-Choon</creator><scope>EVB</scope></search><sort><creationdate>20211026</creationdate><title>Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition</title><author>Moon, Jung Yoon ; 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The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES PRINTED CIRCUITS |
| title | Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition |
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