Circuit forming method using selective etching of electrically conductive metal this film seed layer and etching solution composition

The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate ma...

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Bibliographische Detailangaben
Hauptverfasser: Moon, Jung Yoon, Seong, Hyeon-Jun, Moon, Byung Woong, Kim, Su Han, Chung, Kwang-Choon
Format: Patent
Sprache:eng
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Zusammenfassung:The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.