Protection circuit, oscillation compensation circuit and power supply circuit in solid state pulse modulator

Protection circuit, oscillation compensation circuit and power supply circuit in solid state pulse modulator

The disclosed technology relates to a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to suppl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yan, Xinshui, Liu, Yaohong, Liu, Jinsheng, Jia, Wei, Li, Wei, Zhao, Ziran
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:The disclosed technology relates to a gate protection circuit for an Insulated Gate Bipolar Transistor (IGBT), the IGBT being used as a switch device in a solid state pulse modulator based on the MARX generator principle, the gate protection circuit including: a voltage regulator configured to supply a stable voltage to an emitter of the IGBT with respect to the ground for a gate of the IGBT.