Electrode/dielectric barrier material formation and structures

Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further i...

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Bibliographische Detailangaben
Hauptverfasser: Kelkar, Sanket S, Kim, Dojun, Petz, Christopher W, Rocklein, Matthew N, Kraus, Brenda D
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.