Method for fabricating semiconductor device

Method for fabricating semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lai, Kuo-Chih, Chang, Yun-Tzu, Hsiao, Wei-Ming, Hsu, Chi-Mao, Chang, Ching-Yun, Chou, Shih-Min, Lin, Kuan-Chun, Lu, Yang-Ju, Chen, Yen-Chen, Ho, Nien-Ting
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.