Method of fabricating a semiconductor device

A method of fabricating an integrated circuit includes identifying an edge device of a plurality of devices, the plurality of devices being part of a first layout including gate structures and diffusion regions, modifying the first layout resulting in a second layout, and fabricating the integrated circuit based on the second layout. Modifying the first layout resulting in the second layout includes adding a dummy device next to the edge device, the dummy device and the edge device having a shared diffusion region, adding a dummy gate structure next to the dummy device, extending the shared diffusion region to at least the dummy device, and performing a design rule check on the second layout. The performing the design rule check considers a gate structure of the dummy device as one of two dummy gate structures next to the edge device.