Multilayer thin-film structure and phase shifting device using the same

Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includ...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Yongsung, Lee, Jeongyub, Kim, Jaekwan, Lee, Changseung
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.