Resist composition and resist patterning process

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Domon, Daisuke, Suzuki, Takahiro, Masunaga, Keiichi, Watanabe, Satoshi, Kotake, Masaaki
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.