Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound

A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other...

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Bibliographische Detailangaben
Hauptverfasser: Wakamatsu, Goji, Abe, Tsubasa, Matsumura, Yuushi, Takimoto, Yoshio, Nosaka, Naoya, Sakai, Kazunori, Nakafuji, Shin-ya
Format: Patent
Sprache:eng
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Zusammenfassung:A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.