Method of operating a semiconductor device having a desaturation channel structure

A method is provided for operating a semiconductor device which includes an IGBT having a desaturation semiconductor structure connected to a first electrode terminal and a gate electrode terminal for controlling a desaturation channel. The method includes: applying a first gate voltage to the gate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Laven, Johannes, Schulze, Hans-Joachim
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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