Method of operating a semiconductor device having a desaturation channel structure

A method is provided for operating a semiconductor device which includes an IGBT having a desaturation semiconductor structure connected to a first electrode terminal and a gate electrode terminal for controlling a desaturation channel. The method includes: applying a first gate voltage to the gate electrode terminal so that current flows through the IGBT between the first electrode terminal and a second electrode terminal and current flow through the desaturation channel is substantially blocked; applying a different second gate voltage to the gate electrode terminal so that current flows through the IGBT between the first and second electrode terminals and charge carriers flow as a desaturating current through the desaturation channel to the first electrode terminal; and applying a different third gate voltage to the gate electrode terminal so that current flow through the IGBT between the first and second electrode terminals is substantially blocked.