Insulated gate bipolar transistor module and manufacturing method thereof

Insulated gate bipolar transistor module and manufacturing method thereof

An IGBT module includes a heat dissipation base plate. A first ceramic heat dissipation element is embedded in the heat dissipation base plate. A first wiring layer is provided on the surface of the heat dissipation base plate. The first side of an IGBT chip is mounted onto the first wiring layer. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhong, Shan, Hu, Qizhao, Gao, Weidong, Lam, Wai Kin Raymond
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An IGBT module includes a heat dissipation base plate. A first ceramic heat dissipation element is embedded in the heat dissipation base plate. A first wiring layer is provided on the surface of the heat dissipation base plate. The first side of an IGBT chip is mounted onto the first wiring layer. The second side of the IGBT chip is provided with a heat conductive metal plate. A first heat dissipation plate having a first through hole is provided on a side of the first wiring layer. The IGBT chip and the heat conductive metal plate are located in the first through hole. A second wiring layer is provided on a side of the first heat dissipation plate away from the IGBT chip. The second wiring layer is provided on a side of the heat conductive metal plate.