Method for manufacturing semiconductor device and semiconductor device

Method for manufacturing semiconductor device and semiconductor device

A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ozaki, Chiaki, Okabe, Tokutaro, Miyamoto, Yoshinori, Higashitani, Keisuke, Kagoshima, Yuya
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1−zN (0.03≤z≤0.15).