Correlated electron material (CEM) devices with contact region sidewall insulation

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region f...

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Bibliographische Detailangaben
Hauptverfasser: He, Ming, Besser, Paul Raymond, Zhang, Jingyan, Rathor, Manuj
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.