Photoelectric conversion element and method for producing the same

A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a C60 fullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 μm to 170 μm per square micrometer of the area of the binarized image.