Main-auxiliary field-effect transistor configurations with an auxiliary stack and interior parallel transistors

Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that in...

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Bibliographische Detailangaben
Hauptverfasser: Fuh, Hanching, Whitefield, David Scott, Bartle, Dylan Charles, Wang, Hailing, DiCarlo, Paul T, Mason, Jerod F
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.