Method of forming a semiconductor device
In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches th...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In one embodiment, a method of forming a semiconductor device forms gate trenches in a semiconductor substrate. A portion of the material between the trenches is narrowed and another material is formed on sidewalls of the narrowed portion that is substantially not etched by an etchant that etches the material of the portion of the material between the trenches. Source and gate contact openings are formed together. |
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