Gradient atomic layer deposition

A method for forming a semiconductor device includes forming a barrier layer over a dielectric layer, a concentration of an impurity in the barrier layer increasing as the barrier layer extends away from the dielectric layer; and performing a plasma process to treat the barrier layer.

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Bibliographische Detailangaben
Hauptverfasser: Lee, Ya-Lien, Kuo, Chia-Pang
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A method for forming a semiconductor device includes forming a barrier layer over a dielectric layer, a concentration of an impurity in the barrier layer increasing as the barrier layer extends away from the dielectric layer; and performing a plasma process to treat the barrier layer.