Method of manufacturing an ultrasonic probe

Provided are an ultrasonic probe and a method of manufacturing the same. The method includes: forming a plurality of grooves by removing regions of a first insulating layer and a first silicon wafer from a first substrate including the first silicon wafer and the first insulating layer; bonding a se...

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Bibliographische Detailangaben
Hauptverfasser:	Kim, Young-il, Choi, Min-seog, Jeon, Tae-ho, Song, Jong-keun
Format:	Patent
Sprache:	eng
Schlagworte:	ACOUSTICS ACOUSTICS NOT OTHERWISE PROVIDED FOR DEAF-AID SETS DIAGNOSIS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY FOR PERFORMING MECHANICAL WORK IN GENERAL GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL HUMAN NECESSITIES HYGIENE IDENTIFICATION INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS MEASURING MEDICAL OR VETERINARY SCIENCE METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICALVIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING,NOISE OR OTHER ACOUSTIC WAVES IN GENERAL MUSICAL INSTRUMENTS PERFORMING OPERATIONS PHYSICS PUBLIC ADDRESS SYSTEMS SOUND-PRODUCING DEVICES SURGERY TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided are an ultrasonic probe and a method of manufacturing the same. The method includes: forming a plurality of grooves by removing regions of a first insulating layer and a first silicon wafer from a first substrate including the first silicon wafer and the first insulating layer; bonding a second substrate including a second silicon wafer, a second insulating layer, and a silicon thin layer to the first substrate, such that the plurality of grooves turn into a plurality of cavities; removing the second silicon wafer from the second substrate; forming transducer cells on regions of the second insulating layer corresponding to the plurality of cavities; and forming a plurality of unit substrates by cutting the first substrate, the silicon thin layer, and the second insulating layer.