Semi-insulating gallium arsenide crystal substrate

A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resi...

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Bibliographische Detailangaben

Hauptverfasser:	Kawamoto, Shinya, Hashio, Katsushi, Kiyama, Makoto, Ishikawa, Yukio
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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