Semi-insulating gallium arsenide crystal substrate

A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kawamoto, Shinya, Hashio, Katsushi, Kiyama, Makoto, Ishikawa, Yukio
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.