Semi-insulating gallium arsenide crystal substrate

Semi-insulating gallium arsenide crystal substrate

A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resi...

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Hauptverfasser: Kawamoto, Shinya, Hashio, Katsushi, Kiyama, Makoto, Ishikawa, Yukio
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kawamoto, Shinya
Hashio, Katsushi
Kiyama, Makoto
Ishikawa, Yukio
description A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11024705B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11024705B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11024705B23</originalsourceid><addsrcrecordid>eNrjZDAKTs3N1M3MKy7NSSzJzEtXSE_MyckszVVILCpOzctMSVVILqosLknMUSguTSouKUosSeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGBkYm5gamTkbGxKgBAA2fLMM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semi-insulating gallium arsenide crystal substrate</title><source>esp@cenet</source><creator>Kawamoto, Shinya ; Hashio, Katsushi ; Kiyama, Makoto ; Ishikawa, Yukio</creator><creatorcontrib>Kawamoto, Shinya ; Hashio, Katsushi ; Kiyama, Makoto ; Ishikawa, Yukio</creatorcontrib><description>A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210601&amp;DB=EPODOC&amp;CC=US&amp;NR=11024705B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210601&amp;DB=EPODOC&amp;CC=US&amp;NR=11024705B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kawamoto, Shinya</creatorcontrib><creatorcontrib>Hashio, Katsushi</creatorcontrib><creatorcontrib>Kiyama, Makoto</creatorcontrib><creatorcontrib>Ishikawa, Yukio</creatorcontrib><title>Semi-insulating gallium arsenide crystal substrate</title><description>A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKTs3N1M3MKy7NSSzJzEtXSE_MyckszVVILCpOzctMSVVILqosLknMUSguTSouKUosSeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYaGBkYm5gamTkbGxKgBAA2fLMM</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Kawamoto, Shinya</creator><creator>Hashio, Katsushi</creator><creator>Kiyama, Makoto</creator><creator>Ishikawa, Yukio</creator><scope>EVB</scope></search><sort><creationdate>20210601</creationdate><title>Semi-insulating gallium arsenide crystal substrate</title><author>Kawamoto, Shinya ; Hashio, Katsushi ; Kiyama, Makoto ; Ishikawa, Yukio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11024705B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kawamoto, Shinya</creatorcontrib><creatorcontrib>Hashio, Katsushi</creatorcontrib><creatorcontrib>Kiyama, Makoto</creatorcontrib><creatorcontrib>Ishikawa, Yukio</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kawamoto, Shinya</au><au>Hashio, Katsushi</au><au>Kiyama, Makoto</au><au>Ishikawa, Yukio</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semi-insulating gallium arsenide crystal substrate</title><date>2021-06-01</date><risdate>2021</risdate><abstract>A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semi-insulating gallium arsenide crystal substrate
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