Resin composition for encapsulating semiconductor, semiconductor device, and method for producing resin composition for encapsulating semiconductor

The resin composition for encapsulating semiconductor of the present invention is a resin composition for encapsulating semiconductor including an epoxy resin, a curing agent, an inorganic filler, and carbon black fine particles, in which when the resin composition for encapsulating semiconductor is...

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Bibliographische Detailangaben
Hauptverfasser:	Kotani, Takahiro, Shibata, Hiroshi
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS POLISHES PREPARATION OF CARBON BLACK SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS,TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	The resin composition for encapsulating semiconductor of the present invention is a resin composition for encapsulating semiconductor including an epoxy resin, a curing agent, an inorganic filler, and carbon black fine particles, in which when the resin composition for encapsulating semiconductor is injection-molded to have a length of 80 mm, a width of 10 mm and a thickness of 4 mm under conditions of a mold temperature of 175° C., an injection pressure of 10 MPa, and a curing time of 120 seconds, and then heated at 175° C. for 4 hours to obtain a cured product, and then a surface of the obtained cured product is observed with a fluorescence microscope, a maximum particle diameter of aggregates of the carbon black fine particles is 50 μm or less.