Multilayer ceramic capacitor using molybdenum (Mo) ground layer and manufacturing method of the same

A multilayer ceramic capacitor includes: a multilayer chip in which each of dielectric layers and each of internal electrode layers are alternately stacked and the internal electrode layers are alternately exposed to two end faces; and external electrodes formed on the two end faces; wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer including Mo; and "M≥0.003185×(Ew×Et)−0.5921 is satisfied when "Et" is a height from a bottom one of the internal electrode layers to a top one of the internal electrode layers, "Ew" is a width of the internal electrode layers in a direction in which side faces of the multilayer chip face with each other, and "M" is a Mo concentration (atm %) with respect to a main component ceramic of a total of the multilayer chip and the pair of external electrodes.