Trimmable silicon-based thermistor with reduced stress dependence

Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segmen...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Wai, French, William David, Lee, Dok Won, Visokay, Mark Robert, Jackson, Ricky Alan, Mazotti, Erika Lynn
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS SEMICONDUCTOR DEVICES TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.