Magnetoresistive random access memory and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on t...

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Bibliographische Detailangaben

Hauptverfasser:	Li, Kun-Ju, Shih, Yu-Lung, Li, Chih-Yueh, Tsai, Bin-Siang, Tsai, Fu-Yu, Liu, Hsin-Jung, Hou, Chau-Chung, Chan, Ang, Hou, Tai-Cheng, Lu, Chun-Tsen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS
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