Method for monitoring gas in wafer processing system

A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via...

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Bibliographische Detailangaben
Hauptverfasser:	Hsieh, Wen-Chieh, Chung, Chia-Hung, Wu, Li-Jen, Kao, Ko-Bin, Yeh, Su-Yu, Chen, Hung-Ming, Wu, Yong-Ting, Chen, Chun-Yu
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.