Circuit structure and memory circuit with resistive memory elements, and related methods
The disclosure provides a circuit structure for storage and retrieval of data, and related methods. The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source t...
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| creator | Soss, Steven R Paul, Bipul C |
| description | The disclosure provides a circuit structure for storage and retrieval of data, and related methods. The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source terminal of the drive transistor and a first bit line may be in a first memory state. A second resistive memory element coupled between the drain terminal of the drive transistor and a second bit line may be in a second memory state opposite the first memory state. The structure may also include a read transistor having a source terminal coupled to the drain terminal of the drive transistor, a drain terminal coupled to ground, and a gate terminal coupled to a select line. |
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The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source terminal of the drive transistor and a first bit line may be in a first memory state. A second resistive memory element coupled between the drain terminal of the drive transistor and a second bit line may be in a second memory state opposite the first memory state. The structure may also include a read transistor having a source terminal coupled to the drain terminal of the drive transistor, a drain terminal coupled to ground, and a gate terminal coupled to a select line.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210511&DB=EPODOC&CC=US&NR=11004509B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210511&DB=EPODOC&CC=US&NR=11004509B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Soss, Steven R</creatorcontrib><creatorcontrib>Paul, Bipul C</creatorcontrib><title>Circuit structure and memory circuit with resistive memory elements, and related methods</title><description>The disclosure provides a circuit structure for storage and retrieval of data, and related methods. The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source terminal of the drive transistor and a first bit line may be in a first memory state. A second resistive memory element coupled between the drain terminal of the drive transistor and a second bit line may be in a second memory state opposite the first memory state. 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The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source terminal of the drive transistor and a first bit line may be in a first memory state. A second resistive memory element coupled between the drain terminal of the drive transistor and a second bit line may be in a second memory state opposite the first memory state. The structure may also include a read transistor having a source terminal coupled to the drain terminal of the drive transistor, a drain terminal coupled to ground, and a gate terminal coupled to a select line.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Circuit structure and memory circuit with resistive memory elements, and related methods |
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