Circuit structure and memory circuit with resistive memory elements, and related methods

The disclosure provides a circuit structure for storage and retrieval of data, and related methods. The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Soss, Steven R, Paul, Bipul C
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The disclosure provides a circuit structure for storage and retrieval of data, and related methods. The circuit structure may include drive transistor having a source terminal, a drain terminal, and a gate terminal coupled to a word line. A first resistive memory element coupled between the source terminal of the drive transistor and a first bit line may be in a first memory state. A second resistive memory element coupled between the drain terminal of the drive transistor and a second bit line may be in a second memory state opposite the first memory state. The structure may also include a read transistor having a source terminal coupled to the drain terminal of the drive transistor, a drain terminal coupled to ground, and a gate terminal coupled to a select line.