Seal ring structure, semiconductor die, and method for detecting cracks on semiconductor die

A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a...

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Bibliographische Detailangaben
Hauptverfasser: Fan, Kuo-Lung, Fu, Ching-Hung, Pan, Chung-We
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A seal ring structure is provided. The seal ring structure includes a seal ring on a semiconductor substrate. The seal ring includes a first interconnect element and a plurality of second interconnect elements. The first interconnect element is formed on a shallow trench isolation (STI) region and a first group of P-type doping regions over the semiconductor substrate. The second interconnect elements are formed below the first interconnect element and on a second group of P-type doping regions over the semiconductor substrate. The second interconnect elements are electrically separated from the first interconnect element, and the first and second groups of P-type doping regions are separated by the STI region.