Semiconductor device having diode devices with different barrier heights and manufacturing method thereof
A Schottky diode device includes a substrate having a first conductivity type, a first well region having a second conductivity type disposed in the substrate, and a first doped region having the second conductivity type in the first well region, wherein the first doped region includes a first porti...
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| Sprache: | eng |
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| Zusammenfassung: | A Schottky diode device includes a substrate having a first conductivity type, a first well region having a second conductivity type disposed in the substrate, and a first doped region having the second conductivity type in the first well region, wherein the first doped region includes a first portion and a second portion, and the first portion and the second portion have different doping concentrations. The first portion includes a region having at least four sides, from a top-view perspective, abutting the second portion. |
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