Photoresist composition for deep ultraviolet light patterning method and method of manufacturing semiconductor device

Provided is a photoresist composition including a plasma light absorber and a method of manufacturing semiconductor devices using the same. The photoresist composition may include a developable polymer, a photoacid generator, a plasma light absorber, and an organic solvent. The plasma light absorber may be relatively transmissive to light used with a photolithographic patterning process (e.g., ultraviolet light) to pattern a layer formed with the photoresist composition and be relatively absorptive to light created in a subsequent etching process (such as light generated from a plasma). When forming a semiconductor device, a patterned photoresist layer may be more precisely generated and may better maintain is desired properties when used to etch various target layers of the semiconductor device.