Oxide film formation method

Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece (7) placed in a pressure-reduced treatment furnace (5), whereby an oxide film is formed on a surface...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Kameda, Naoto, Miura, Toshinori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece (7) placed in a pressure-reduced treatment furnace (5), whereby an oxide film is formed on a surface of the workpiece (7) by a chemical vapor deposition process. An example of the unsaturated hydrocarbon gas is an ethylene gas. An example of the raw material gas is a TEOS gas. The flow rate of the ozone gas is preferably set equal to or more than twice the total flow rate of the unsaturated hydrocarbon gas and the raw material gas. By this oxide film formation method, the oxide film is formed on the workpiece (7) at a high deposition rate even under low-temperature conditions of 200° C. or lower.