Resist composition, method of forming resist pattern, and polymer compound

To provide a resist composition and a method for forming a resist pattern achieving improvement in resolution, particularly in electron beam or EUV lithography.SOLUTION: The resist composition generates an acid by exposure and shows changes in the solubility with a developer by an action of an acid,...

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Bibliographische Detailangaben
Hauptverfasser: Suzuki, Kenta, Yahagi, Masahito, Yamazaki, Hiroto
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:To provide a resist composition and a method for forming a resist pattern achieving improvement in resolution, particularly in electron beam or EUV lithography.SOLUTION: The resist composition generates an acid by exposure and shows changes in the solubility with a developer by an action of an acid, and the composition comprises a polymeric compound (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) below and a structural unit (a10) derived from a compound represented by general formula (a10-1) below, and having no structural unit represented by general formula (1). In the formulae, Raand Rarepresent a polymerizable group-containing group; Waand Warepresent an aromatic hydrocarbon group having a valence of (n+1) or (n+1); nand nrepresent an integer of 1 to 3; and Zrepresents Fe, Co, Ni, Cr or Ru.SELECTED DRAWING: None