Photodetection device, photodetection system, and moving body

An avalanche diode is provided and includes a first semiconductor region and a second semiconductor region. At a deeper position, the avalanche diode includes a third semiconductor region having an impurity concentration lower than that of the first semiconductor region, and a fourth semiconductor r...

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Bibliographische Detailangaben
1. Verfasser: Iwata, Junji
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An avalanche diode is provided and includes a first semiconductor region and a second semiconductor region. At a deeper position, the avalanche diode includes a third semiconductor region having an impurity concentration lower than that of the first semiconductor region, and a fourth semiconductor region having an impurity concentration lower than that of the second semiconductor region. At a further deeper position, the avalanche diode includes a fifth semiconductor region having an impurity concentration lower than that of the third semiconductor region. In a plan view, the first semiconductor region overlaps at least a part of the third semiconductor region, the second semiconductor region overlaps at least a part of the fourth semiconductor region, and the third and fourth semiconductor regions overlap the fifth semiconductor region.