Ultraviolet C light-emitting diode having electron blocking layers

An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Tsai, Chia-Lung, Liu, Hsueh-Hsing
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.