Light-emitting diodes with buffer layers

A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semicond...

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Bibliographische Detailangaben
Hauptverfasser: Tong, Jichu, Lin, Zhiwei, Jiang, Wei, Fang, Tianzu, Chen, Kaixuan, Zhang, Yong, Wang, Yang, Zhuo, Xiangjing
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).