Semiconductor devices

A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern,...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Byoung-Gi, Cantoro, Mirco, Heo, Yeon-Cheol, Yoe, Chang-Min, Lee, Dong-Hun, Lee, Yun-Il, Yun, Seung-Chan, Lee, Hyung-Suk
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.