Semiconductor devices having a gate isolation layer and methods of manufacturing the same

Semiconductor devices are provided. A semiconductor device includes a channel region that protrudes from a substrate. The semiconductor device includes a gate line on the channel region. Moreover, the semiconductor device includes a gate isolation layer that is between a first portion of the gate line and a second portion of the gate line. The gate isolation layer is in contact with the gate line and includes a gap that is in the gate isolation layer. Related methods of manufacturing a semiconductor device are also provided.