Apparatus and method for online and real-time detection of temperature of epitaxial wafer

An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.